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Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm Dual Voltage for Newer and

SKU 50510204331
4.5
USD35.99 USD83.99

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Ships within 48 hours · Estimated delivery Aug 4 - Aug 9

Description

Dual Voltage for Newer and Older systems

2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 2 Compatibility

NT2GC64B88BONS-CG Capacity 2GB (1x 2GB) Brand Nanya Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

and don't be surprised if you can actually upgrade your Mac with double the amount of RAM that was originally specified by Apple

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm Dual Voltage for Newer andProduct Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

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